dc.contributor.author | Zervos, Matthew | en |
dc.creator | Zervos, Matthew | en |
dc.date.accessioned | 2019-05-06T12:24:52Z | |
dc.date.available | 2019-05-06T12:24:52Z | |
dc.date.issued | 2008 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48954 | |
dc.description.abstract | The properties of nanowires with built-in p-n junctions such as the energetic position of the one-dimensional sub-bands, charge distributions and band bending in equilibrium are determined by the self-consistent solution of the Poisson-Schrödinger equations in the effective mass approximation. The built-in potential Vbi of a GaAs nanowire with a radius of R = 500 Å and a symmetric built-in p-n junction are equal to Vbi = 1.4 V at T = 300 K, taking the donor and acceptor doping levels to be equal to ND = NA = 1 × 1018 cm-3. The radial depletion is governed by the position of the conduction-band edge relative to the Fermi level at the surface, i.e. eS = EC - EF, and is a 'shell' with a thickness of 250 Å for E C - EF = 0.7 eV while the depletion width along z is ≈0.15 νm which is three times larger than the value of the bulk p-n junction taking the same doping level. It is found that decreasing the radius leads to a reduction in Vbi from 1.4 V at R = 500 Å to V bi = 0.02 V at R = 50 Å and also complete depletion of the nanowire across its diameter and all along its length. Similarly, a reduction in the doping level leads to a decrease in Vbi down to Vbi ≈ 0.02 V for ND = NA = 1 × 1016 cm-3 which is significantly lower than Vbi ≈ 1.1 V obtained for the bulk p-n junction. These findings are discussed in a practical context related to growth and devices like nanowire solar cells. © 2008 IOP Publishing Ltd. | en |
dc.language.iso | eng | en |
dc.source | Semiconductor Science and Technology | en |
dc.subject | Poisson distribution | en |
dc.subject | Nanostructured materials | en |
dc.subject | Nanostructures | en |
dc.subject | Nanowires | en |
dc.subject | Electric wire | en |
dc.subject | Semiconductor junctions | en |
dc.subject | Band bending | en |
dc.subject | Built in potential | en |
dc.subject | Charge distribution | en |
dc.subject | Effective mass approximation (EMA) | en |
dc.subject | Energetic position | en |
dc.subject | One-dimensional | en |
dc.subject | P N junctions | en |
dc.subject | Self consistent solution | en |
dc.subject | Semiconductor nanowires (SNW) | en |
dc.subject | Subbands (SB) | en |
dc.title | Properties of the ubiquitous p-n junction in semiconductor nanowires | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1088/0268-1242/23/7/075016 | |
dc.description.volume | 23 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.gnosis.orcid | 0000-0002-6321-233X | |