The Pinch-Off Behaviour and Charge Distribution in AlGaN-GaN-AlGaN-GaN Double Heterostructure Field Effect Transistors
Ημερομηνία
2001Συγγραφέας
Zervos, MatthewKostopoulos, A.
Constantinidis, G.
Kayambaki, M.
Mikroulis, S.
Flytzanis, N.
Georgakilas, A.
Source
Physica Status Solidi (A) Applied ResearchVolume
188Pages
259-262Google Scholar check
Metadata
Εμφάνιση πλήρους εγγραφήςΕπιτομή
AlxGa1-xN/GaN/AlyGa1-yN/GaN double heterojunction field effect transistors with bottom AlyGa1-yN barrier widths between 100 and 2000 Å and Al contents of y = 0.15-0.3 were grown by radio-frequency molecular beam epitaxy on both n+ and high resistivity GaN buffers on Al2O3. The charge distribution and pinch-off behaviour of the double heterojunctions grown on the n+ GaN layers were investigated in detail by capacitance-voltage profiling in conjunction with self-consistent Poisson-Schrödinger calculations. The electron densities and pinch-off voltages, deduced from capacitance-voltage measurements of the Schottky diodes are in excellent agreement with the theoretical values. We discuss the role of doping on the 2DEG density.