dc.contributor.author | Zervos, Matthew | en |
dc.contributor.author | Pelekanos, N. T. | en |
dc.creator | Zervos, Matthew | en |
dc.creator | Pelekanos, N. T. | en |
dc.date.accessioned | 2019-05-06T12:24:55Z | |
dc.date.available | 2019-05-06T12:24:55Z | |
dc.date.issued | 2008 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48979 | |
dc.description.abstract | A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement in the radial direction and (ii) the Fermi level position with respect to the 1D sub-band(s), both of which can be determined analytically. We calculate the current-voltage (I-V) characteristic for an InAs nanowire, which has a radius of 200 Å and two 50 Å InP, built-in barriers, which define a 150 Å long InAs quantum disk and find that a peak in the current occurs at an applied voltage of 72 mV, corresponding to resonant tunneling of carriers through the double barriers. This is in good agreement with the I-V curve measured in a similar nanowire at a temperature of 4.2 K, where resonant tunneling occurs at 80 mV. It is deduced that the Fermi level is ≈26 meV above the conduction band edge at the surface of the specific InAs nanowire, which is ten times lower than the Fermi level pinning at inverted InAs thin film surfaces. We discuss the importance of the strain and surface depletion. © 2008 American Institute of Physics. | en |
dc.language.iso | eng | en |
dc.source | Journal of Applied Physics | en |
dc.subject | Matrix algebra | en |
dc.subject | Quantum chemistry | en |
dc.subject | Electron mobility | en |
dc.subject | Nanostructured materials | en |
dc.subject | Nanostructures | en |
dc.subject | Electric conductivity | en |
dc.subject | Semiconductor materials | en |
dc.subject | Indium arsenide | en |
dc.subject | Fermi level | en |
dc.subject | Nanowires | en |
dc.subject | Electric wire | en |
dc.subject | Conduction band edge | en |
dc.subject | Semiconductor quantum dots | en |
dc.subject | Electric currents | en |
dc.subject | Applied voltages | en |
dc.subject | Current transport | en |
dc.subject | Double barriers | en |
dc.subject | Effective mass approximation | en |
dc.subject | Resonant tunneling | en |
dc.subject | One-dimensional | en |
dc.subject | Silicon solar cells | en |
dc.subject | Surface depletion | en |
dc.subject | Current-voltage | en |
dc.subject | Excavation | en |
dc.subject | Fermi-level pinning | en |
dc.subject | Fermions | en |
dc.subject | I-V curves | en |
dc.subject | Quantum disks | en |
dc.subject | Quantum-confinement | en |
dc.subject | Radial directions | en |
dc.subject | Semiconducting indium | en |
dc.subject | Semiconductor nanowires | en |
dc.subject | Sub bands | en |
dc.subject | Thick films | en |
dc.subject | Thin film surfaces | en |
dc.subject | Transfer matrix | en |
dc.subject | Transfer matrix method | en |
dc.subject | Tunneling (excavation) | en |
dc.title | Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1063/1.2963691 | |
dc.description.volume | 104 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.gnosis.orcid | 0000-0002-6321-233X | |