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dc.contributor.authorZervos, Matthewen
dc.contributor.authorPelekanos, N. T.en
dc.creatorZervos, Matthewen
dc.creatorPelekanos, N. T.en
dc.date.accessioned2019-05-06T12:24:55Z
dc.date.available2019-05-06T12:24:55Z
dc.date.issued2008
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48979
dc.description.abstractA one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement in the radial direction and (ii) the Fermi level position with respect to the 1D sub-band(s), both of which can be determined analytically. We calculate the current-voltage (I-V) characteristic for an InAs nanowire, which has a radius of 200 Å and two 50 Å InP, built-in barriers, which define a 150 Å long InAs quantum disk and find that a peak in the current occurs at an applied voltage of 72 mV, corresponding to resonant tunneling of carriers through the double barriers. This is in good agreement with the I-V curve measured in a similar nanowire at a temperature of 4.2 K, where resonant tunneling occurs at 80 mV. It is deduced that the Fermi level is ≈26 meV above the conduction band edge at the surface of the specific InAs nanowire, which is ten times lower than the Fermi level pinning at inverted InAs thin film surfaces. We discuss the importance of the strain and surface depletion. © 2008 American Institute of Physics.en
dc.language.isoengen
dc.sourceJournal of Applied Physicsen
dc.subjectMatrix algebraen
dc.subjectQuantum chemistryen
dc.subjectElectron mobilityen
dc.subjectNanostructured materialsen
dc.subjectNanostructuresen
dc.subjectElectric conductivityen
dc.subjectSemiconductor materialsen
dc.subjectIndium arsenideen
dc.subjectFermi levelen
dc.subjectNanowiresen
dc.subjectElectric wireen
dc.subjectConduction band edgeen
dc.subjectSemiconductor quantum dotsen
dc.subjectElectric currentsen
dc.subjectApplied voltagesen
dc.subjectCurrent transporten
dc.subjectDouble barriersen
dc.subjectEffective mass approximationen
dc.subjectResonant tunnelingen
dc.subjectOne-dimensionalen
dc.subjectSilicon solar cellsen
dc.subjectSurface depletionen
dc.subjectCurrent-voltageen
dc.subjectExcavationen
dc.subjectFermi-level pinningen
dc.subjectFermionsen
dc.subjectI-V curvesen
dc.subjectQuantum disksen
dc.subjectQuantum-confinementen
dc.subjectRadial directionsen
dc.subjectSemiconducting indiumen
dc.subjectSemiconductor nanowiresen
dc.subjectSub bandsen
dc.subjectThick filmsen
dc.subjectThin film surfacesen
dc.subjectTransfer matrixen
dc.subjectTransfer matrix methoden
dc.subjectTunneling (excavation)en
dc.titleCurrent transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculationen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1063/1.2963691
dc.description.volume104
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidZervos, Matthew [0000-0002-6321-233X]


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