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dc.contributor.authorNikolaou, Panagiotaen
dc.contributor.authorSazeides, Yiannakisen
dc.contributor.authorNdreu, L.en
dc.contributor.authorKleanthous, Marios M.en
dc.creatorNikolaou, Panagiotaen
dc.creatorSazeides, Yiannakisen
dc.creatorNdreu, L.en
dc.creatorKleanthous, Mariosen
dc.date.accessioned2019-11-13T10:41:32Z
dc.date.available2019-11-13T10:41:32Z
dc.date.issued2015
dc.identifier.isbn978-1-4503-4034-2
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/54643
dc.description.abstractTotal Cost of Ownership (TCO) is a key optimization metric for the design of a datacenter. This paper proposes, for the first time, a framework for modeling the implications of DRAM failures and DRAM error protection techniques on the TCO of a datacenter. The framework captures the Effects and interactions of several key parameters including: the choice of DRAM protection technique (e.g. single vs dual channel Chipkill), device width (x4 or x8), memory size, power, FITs for various failure modes, the performance, power and temperature overheads of a protection technique for a given service and mixes of collocated services. The usefulness of the proposed framework is demonstrated through several case studies that identify the best DRAM protection technique in each case, in terms of TCO. Interestingly, our analysis reveals that among the three DRAM protection techniques considered, there is no one that is always superior to all the others. Moreover, each technique is better than the others for some cases. This underlines the importance and the need of the proposed framework for making optimal memory protection datacenter design decisions. As part of this work, we analyze and report the performance and power with single channel and dual channel Chipkill on real hardware when running a web search benchmark alone and collocated with benchmarks of varying memory intensity. This analysis reveals that the choice of memory protection can have serious performance and TCO ramifications depending on the memory characteristics of collocated services. Other analysis reveals that, for the datacenter and services assumed in this study, when using Chipkill protection it can be beneficial for TCO to use DRAM with 100x the failure rate of a baseline DRAM as long as the cost per DIMM is at least a dollar less compared to the baseline. © 2015 ACM.en
dc.publisherIEEE Computer Societyen
dc.sourceProceedings of the Annual International Symposium on Microarchitecture, MICROen
dc.source48th Annual IEEE/ACM International Symposium on Microarchitecture, MICRO 2015en
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84959862033&doi=10.1145%2f2830772.2830804&partnerID=40&md5=2516446146e8ea4bf27a0063ac38d887
dc.subjectWorld Wide Weben
dc.subjectComputer architectureen
dc.subjectreliabilityen
dc.subjectFailure analysisen
dc.subjectOutagesen
dc.subjectCostsen
dc.subjectCost benefit analysisen
dc.subjectBenchmarkingen
dc.subjectProgram processorsen
dc.subjecttotal cost of ownershipen
dc.subjectIntegrated circuit designen
dc.subjectData centersen
dc.subjectDynamic random access storageen
dc.subjectco-running servicesen
dc.subjectDatacenter designsen
dc.subjectdatacentersen
dc.subjectDRAMen
dc.subjectMemory protectionen
dc.subjectOffline servicesen
dc.subjectonline and offline servicesen
dc.subjectOptimal memoryen
dc.subjectProtection techniquesen
dc.subjectSingle channelsen
dc.titleModeling the implications of DRAM failures and protection techniques on datacenter TCOen
dc.typeinfo:eu-repo/semantics/conferenceObject
dc.identifier.doi10.1145/2830772.2830804
dc.description.volume05-09-December-2015en
dc.description.startingpage572
dc.description.endingpage584
dc.author.faculty002 Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Πληροφορικής / Department of Computer Science
dc.type.uhtypeConference Objecten
dc.description.notes<p>Sponsors: ARMen
dc.description.noteset al.en
dc.description.notesIBMen
dc.description.notesIntelen
dc.description.notesMicrosoften
dc.description.notesNetAppen
dc.description.notesConference code: 119360en
dc.description.notesCited By :2</p>en


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