Infrared spectroscopic study of vacuum evaporated amorphous thin films of MoO3-SiO
Hogarth, C. A.
Theocharis, Charis R.
SourceJournal of Materials Science
Google Scholar check
MetadataShow full item record
A series of amorphous MoO3-SiO thin films of varying compositions were investigated by infrared spectroscopy. In some cases, a shift in band frequency was observed. Some new peaks appeared when SiO was mixed in MoO3. These new peaks are due to bond-rocking vibrations of the bridging oxygen atoms (430 to 440 cm-1), bending motion of the same oxygen atom (800 to 810 cm-1), stretching vibration of non-bridging oxygen atoms (876 cm-1) and bond-stretching vibrations of oxygen atoms (1040 to 1060 cm-1) in SiO. The band of 940 cm-1 is attributed to the absorption of oxygen atoms in its two-fold-coordinated bridging Si-O-Si bond at an isolated site indicating that there is no oxygen atom as a second-nearest neighbour to any other oxygen atom.