Spatial dependence of ultrafast carrier recombination centers of phosphorus-implanted and annealed silicon wafers

Abstract

In this letter, the spatial dependence of the carrier recombination centers induced in phosphorus-implanted and annealed silicon wafers have been examined. Ultrafast time-resolved reflectivity measurements of a set of phosphorus-implanted annealed silicon wafers (10 16P +/cm 2) as a function of position on the wafer have been carried out, and an x-y map of the carrier lifetime for each of the samples has been obtained. Measurements reveal distinct features of the distribution of carrier recombination centers for the nonannealed and annealed samples between 350°C and 1100°C in an area of 36×36μm 2 with resolution better than 3 μm. The presence of islands of clusters in ion-implanted and annealed samples is also discussed in this letter. © 2002 American Institute of Physics.