| dc.contributor.author | Othonos, Andreas S. | en |
| dc.contributor.author | Christofides, Constantinos | en |
| dc.contributor.editor | Christofides, C. Ghibaudo,G. | en |
| dc.creator | Othonos, Andreas S. | en |
| dc.creator | Christofides, Constantinos | en |
| dc.date.accessioned | 2019-12-02T15:32:07Z | |
| dc.date.available | 2019-12-02T15:32:07Z | |
| dc.date.issued | 1997 | |
| dc.identifier.issn | 0080-8784 | |
| dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/58927 | |
| dc.source | Semiconductors and Semimetals | en |
| dc.subject | SI | en |
| dc.subject | DEFECTS | en |
| dc.subject | KINETICS | en |
| dc.subject | GE | en |
| dc.subject | INP | en |
| dc.subject | LASER | en |
| dc.subject | MICROPROBE | en |
| dc.subject | PHOTO-LUMINESCENCE | en |
| dc.subject | SILICON LAYERS | en |
| dc.title | Photoluminescence and Raman scattering of ion implanted semiconductors. Influence of annealing | en |
| dc.type | info:eu-repo/semantics/article | |
| dc.description.volume | 46 | |
| dc.description.startingpage | 73 | |
| dc.description.endingpage | 114 | |
| dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
| dc.author.department | Τμήμα Φυσικής / Department of Physics | |
| dc.type.uhtype | Article | en |
| dc.description.notes | <p>PT: S | en |
| dc.description.notes | TC: 0 | en |
| dc.description.notes | J9: SEMICONDUCT SEMIMET</p> | en |
| dc.source.abbreviation | Semicond.Sdemimet. | en |
| dc.contributor.orcid | Othonos, Andreas S. [0000-0003-0016-9116] | |
| dc.contributor.orcid | Christofides, Constantinos [0000-0002-4020-4660] | |
| dc.gnosis.orcid | 0000-0003-0016-9116 | |
| dc.gnosis.orcid | 0000-0002-4020-4660 | |
