dc.contributor.author | Papageorgiou, Polina | en |
dc.contributor.author | Zervos, Matthew | en |
dc.contributor.author | Othonos, Andreas S. | en |
dc.creator | Papageorgiou, Polina | en |
dc.creator | Zervos, Matthew | en |
dc.creator | Othonos, Andreas S. | en |
dc.date.accessioned | 2019-12-02T15:32:20Z | |
dc.date.available | 2019-12-02T15:32:20Z | |
dc.date.issued | 2011 | |
dc.identifier.issn | 1931-7573 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/58983 | |
dc.description.abstract | Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding to the body centred cubic crystal structure of In2O3 while the photoluminescence (PL) spectrum at 300 K consisted of two broad peaks, centred around 400 and 550 nm. The post-growth nitridation of In2O3 NWs was systematically investigated by varying the nitridation temperature between 500 and 900°C, flow of NH3 and nitridation times between 1 and 6 h. The NWs are eliminated above 600°C while long nitridation times at 500 and 600°C did not result into the efficient conversion of In2O3 to InN. We find that the nitridation of In2O3 is effective by using NH3 and H2 or a two-step temperature nitridation process using just NH3 and slower ramp rates. We discuss the nitridation mechanism and its effect on the PL. © 2011 Papageorgiou et al. | en |
dc.source | Nanoscale Research Letters | en |
dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84255172277&doi=10.1186%2f1556-276X-6-311&partnerID=40&md5=b6e3159eddf87ba5dfdec005408e3220 | |
dc.subject | Crystal structure | en |
dc.subject | X ray diffraction | en |
dc.subject | Nanowires | en |
dc.subject | Nitridation | en |
dc.subject | Nitridation temperature | en |
dc.subject | InN Nanowires | en |
dc.subject | Body-centred cubic | en |
dc.subject | Indium | en |
dc.subject | Nitridation Process | en |
dc.subject | Photoluminescence spectrum | en |
dc.subject | Ramp rates | en |
dc.subject | Si(0 0 1) | en |
dc.subject | Wet oxidation | en |
dc.title | An investigation into the conversion of In2O3 into InN nanowires | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1186/1556-276X-6-311 | |
dc.description.volume | 6 | |
dc.description.issue | 1 | |
dc.description.startingpage | X1 | |
dc.description.endingpage | 5 | |
dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
dc.author.department | Τμήμα Φυσικής / Department of Physics | |
dc.type.uhtype | Article | en |
dc.description.notes | <p>Cited By :13</p> | en |
dc.source.abbreviation | Nanoscale Res.Lett. | en |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.contributor.orcid | Othonos, Andreas S. [0000-0003-0016-9116] | |
dc.gnosis.orcid | 0000-0002-6321-233X | |
dc.gnosis.orcid | 0000-0003-0016-9116 | |