dc.contributor.author | Zervos, Matthew | en |
dc.contributor.author | Othonos, Andreas S. | en |
dc.creator | Zervos, Matthew | en |
dc.creator | Othonos, Andreas S. | en |
dc.date.accessioned | 2019-12-02T15:34:50Z | |
dc.date.available | 2019-12-02T15:34:50Z | |
dc.date.issued | 2009 | |
dc.identifier.issn | 1931-7573 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/59232 | |
dc.description.abstract | Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN y nanowires have an average diameter of 200 nm and lengths ≥5 μm and were grown on Si(111) coated with a few nm's of Au. Nitridation of Sn alone, under a flow of NH 3 is not effective and leads to the deposition of Sn droplets on the Au/Si(111) surface which impedes one-dimensional growth over a wide temperature range i.e. 300-800 °C. This was overcome by the addition of ammonium chloride (NH 4Cl) which undergoes sublimation at 338 °C thereby releasing NH 3 and HCl which act as dispersants thereby enhancing the vapour pressure of Sn and the one-dimensional growth of Sn xN y nanowires. In addition to the action of dispersion, Sn reacts with HCl giving SnCl 2 which in turn reacts with NH 3 leading to the formation of Sn xN y NWs. A first estimate of the band-gap of the Sn xN y nanowires grown on Si(111) was obtained from optical reflection measurements and found to be ≈2.6 eV. Finally, intricate assemblies of nanowires were also obtained at lower growth temperatures. © to the authors 2009. | en |
dc.source | Nanoscale Research Letters | en |
dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-70349987771&doi=10.1007%2fs11671-009-9364-0&partnerID=40&md5=d16966485ebdeecc65e2255e59521cd6 | |
dc.subject | Synthesis | en |
dc.subject | Synthesis (chemical) | en |
dc.subject | Chlorine compounds | en |
dc.subject | Nitrides | en |
dc.subject | Temperature range | en |
dc.subject | Silicon | en |
dc.subject | Si (1 1 1) | en |
dc.subject | Nanowires | en |
dc.subject | Tin | en |
dc.subject | Vapors | en |
dc.subject | Band gaps | en |
dc.subject | Chemical vapor deposition | en |
dc.subject | Electric wire | en |
dc.subject | Tin nitride | en |
dc.subject | Ammonium compounds | en |
dc.subject | Average diameter | en |
dc.subject | Ammonium chloride | en |
dc.subject | Dispersants | en |
dc.subject | One-dimensional growth | en |
dc.subject | Optical reflection measurements | en |
dc.subject | Vapor pressure | en |
dc.subject | Vapour pressures | en |
dc.subject | Chemical vapour deposition | fr |
dc.title | Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1007/s11671-009-9364-0 | |
dc.description.volume | 4 | |
dc.description.issue | 9 | |
dc.description.startingpage | 1103 | |
dc.description.endingpage | 1109 | |
dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
dc.author.department | Τμήμα Φυσικής / Department of Physics | |
dc.type.uhtype | Article | en |
dc.description.notes | <p>Cited By :11</p> | en |
dc.source.abbreviation | Nanoscale Res.Lett. | en |
dc.contributor.orcid | Othonos, Andreas S. [0000-0003-0016-9116] | |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.gnosis.orcid | 0000-0003-0016-9116 | |
dc.gnosis.orcid | 0000-0002-6321-233X | |