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Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission

dc.contributor.authorZervos, Matthewen
dc.contributor.authorOthonos, Andreas S.en
dc.contributor.authorGianetta, V.en
dc.contributor.authorNassiopoulou, Androula Galiounaen
dc.creatorZervos, Matthewen
dc.creatorOthonos, Andreas S.en
dc.creatorGianetta, V.en
dc.creatorNassiopoulou, Androula Galiounaen
dc.date.accessioned2019-12-02T15:34:51Z
dc.date.available2019-12-02T15:34:51Z
dc.date.issued2016
dc.identifier.issn0167-577X
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/59233
dc.description.abstractWe have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we observed the gradual emergence of infra red emission from 0.8 μm to 1.2 μm after processing under H2S between 200°C and 400°C. The resultant PbS/In2S3-3xO3x nanowires had similar resistances and consist of stacked crystals with sizes that depend on the Pb content. We discuss the potential of Pb for doping metal oxide semiconductors and the importance of PbS/In2O3 p-n tunnel junctions for solar cells. © 2015 Elsevier B.V. All rights reserved.en
dc.sourceMaterials Lettersen
dc.source.urihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-84951073267&doi=10.1016%2fj.matlet.2015.12.041&partnerID=40&md5=bd208b56d89184f1b32a64e6217df3b1
dc.subjectMetalsen
dc.subjectCrystal structureen
dc.subjectDoping (additives)en
dc.subjectIndium oxideen
dc.subjectSemiconductor dopingen
dc.subjectTunnel junctionsen
dc.subjectNanowiresen
dc.subjectIndiumen
dc.subjectMOS devicesen
dc.subjectMetal oxide semiconductoren
dc.subjectBixbyiteen
dc.subjectDopingen
dc.subjectInfra red emisionen
dc.subjectInfrared emissionsen
dc.subjectLeaden
dc.subjectPb dopingen
dc.titlePb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emissionen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1016/j.matlet.2015.12.041
dc.description.volume166
dc.description.startingpage129
dc.description.endingpage132
dc.author.facultyΣχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences
dc.author.departmentΤμήμα Φυσικής / Department of Physics
dc.type.uhtypeArticleen
dc.description.notes<p>Cited By :1</p>en
dc.source.abbreviationMater Letten
dc.contributor.orcidOthonos, Andreas S. [0000-0003-0016-9116]
dc.contributor.orcidZervos, Matthew [0000-0002-6321-233X]
dc.gnosis.orcid0000-0003-0016-9116
dc.gnosis.orcid0000-0002-6321-233X


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