Browsing by Author "Zervos, Matthew"
Now showing items 1-20 of 100
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Ab-initio electronic structure calculations and properties of [SixSn1 − x]3N4 ternary nitrides
Pavloudis, T.; Zervos, Matthew; Komninou, P.; Kioseoglou, J. (2016)We carry out ab initio electronic structure calculations of (SixSn1 − x)3N4 using density functional theory with projector augmented-wave potentials under the generalized gradient approximation. We find that the energetically ...
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Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism
Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, Ioannis; Luculescu, C. R.; Florini, N.; Komninou, Ph; Kioseoglou, J.; Othonos, Andreas S. (2014)Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by ...
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Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism
Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Luculescu, C. R.; Florini, N.; Komninou, Ph; Kioseoglou, J.; Othonos, A. (2014)Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by ...
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Carrier dynamics and conductivity of SnO 2 nanowires investigated by time-resolved terahertz spectroscopy
Tsokkou, Demetra; Othonos, Andreas S.; Zervos, Matthew (2012)THz spectroscopy has been applied to investigate the photo-induced and intrinsic conductivity in SnO 2 nanowires using the Drude-Smith model. The refractive index of the nanowires was found to decrease from 2.4 to 2.1 with ...
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Carrier dynamics and conductivity of SnO 2 nanowires investigated by time-resolved terahertz spectroscopy
Tsokkou, D.; Othonos, A.; Zervos, Matthew (2012)THz spectroscopy has been applied to investigate the photo-induced and intrinsic conductivity in SnO 2 nanowires using the Drude-Smith model. The refractive index of the nanowires was found to decrease from 2.4 to 2.1 with ...
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Carrier dynamics in beta-Ga2O3 nanowires
Othonos, Andreas S.; Zervos, Matthew; Christofides, Constantinos (2010)Carrier dynamics have been investigated in beta-Ga2O3 nanowires (NWs) grown by the vapor-liquid-solid mechanism, using ultrashort transient absorption spectroscopy in conjunction with time-correlating single photon counting ...
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Carrier dynamics in InS nanowires grown via chemical vapor deposition
Othonos, A.; Zervos, Matthew (2010)Transient femtosecond absorption spectroscopy and timecorrelating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the ...
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Carrier dynamics in InS nanowires grown via chemical vapor deposition
Othonos, Andreas S.; Zervos, Matthew (2010)Transient femtosecond absorption spectroscopy and timecorrelating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the ...
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Carrier dynamics in Β-Ga2O3 nanowires
Othonos, A.; Zervos, Matthew; Christofides, C. (2010)Carrier dynamics have been investigated in Β-Ga2O 3 nanowires (NWs) grown by the vapor-liquid-solid mechanism, using ultrashort transient absorption spectroscopy in conjunction with time-correlating single photon counting ...
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Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
Othonos, A.; Zervos, Matthew (2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
Othonos, Andreas S.; Zervos, Matthew (2009)Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...
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Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires in quantum dot sensitized solar cells
Zervos, Matthew; Vasile, Eugeniu; Tanasǎ, Eugenia; Othonos, Andreas S. (2017)Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires have been obtained via the deposition of Pb over Sn:In2O3 nanowires and post growth processing under H2S between 100 C-200 C and 300 C-500 C respectively. The ...
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Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires in quantum dot sensitized solar cells
Zervos, Matthew; Vasile, E.; Vasile, E.; Othonos, A. (2017)Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires have been obtained via the deposition of Pb over Sn:In2O3 nanowires and post growth processing under H2S between 100 C-200 C and 300 C-500 C respectively. The ...
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Current transport and thermoelectric properties of very high power factor Fe3O4/SiO2/p-type Si(001) devices
Zervos, Matthew; Viskadourakis, Z.; Athanasopoulos, G.; Flores, R.; Conde, O.; Giapintzakis, John (2014)The current transport and thermoelectric properties of Fe3O4/SiO2/p-type Si(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300K. We observe a sharp drop of the ...
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Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation
Zervos, Matthew; Pelekanos, N. T. (2008)A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement ...
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Current Transport Properties of CuS/Sn:In2O3 versus CuS/SnO2 Nanowires and Negative Differential Resistance in Quantum Dot Sensitized Solar Cells
Zervos, Matthew; Vasile, Eugeniu; Tanasǎ, Eugenia; Karageorgou, E.; Othonos, Andreas S. (2016)The structural, optical, and electrical transport properties of nanowires obtained by the deposition of Cu over Sn doped In2O3 and SnO2 nanowires followed by processing under H2S between 100 and 500°C have been investigated ...
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Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
Tsokkou, Demetra; Othonos, Andreas S.; Zervos, Matthew (2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
Tsokkou, D.; Othonos, A.; Zervos, Matthew (2009)Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
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Delta(δ)-doping of semiconductor nanowires
Zervos, Matthew (2013)The electronic sub-band structure of single δ-layers in GaAs nanowires have been determined via the self-consistent solution of the Poisson-Schrödinger equations in the effective mass approximation. The spread and sheet ...
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Doping and Conductivity Limitations in Sb:SnO2 Nanowires Grown by the Vapor Liquid Solid Mechanism
Zervos, Matthew; Othonos, Andreas; Tanasă, Eugenia; Vasile, Eugeniu (2018)Sb doped SnO2 nanowires have been grown via the vapor liquid solid mechanism on fused SiO2 at 800 °C and 1 mbar under a flow of Ar and O2 by using an excess of metallic Sb in conjunction with Sn. We obtain highly crystalline ...