Browsing by Subject "Semiconducting indium compounds"
Now showing items 1-5 of 5
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Article
Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires
(2004)The numerical self-consistent solution of the Poisson-Schrodinger equations in cylindrical coordinates for calculating electronic states in the effective mass approximation was implemented. High accuracy and rapid convergence ...
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Article
Optical and electrical properties of selectively delta-doped strained InxGa1-xAs/GaAs quantum wells
(1996)We report here an investigation of selectively delta-doped strained InGaAs/GaAs quantum wells. Electronic structures of the systems were calculated by self-consistently solving the Schrödinger and Poisson equations and the ...
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Article
Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition
(2004)We report the growth of single-phase, stoichiometric polycrystalline thin films of the half-Heusler ferromagnet NiMnSb, predicted to be half-metallic, on single crystal InSb (100) substrates heated at 200°C by pulsed laser ...
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Article
Temporal evolution of effects of ultrafast carrier dynamics in In 0.33Ga0.67N: Above and near the bandgap
(2007)Ultrafast carrier dynamics in the In0.33Ga0.67N epilayer were investigated in detail, using femtosecond transient differential non-degenerate optical absorption measurements. Following an excitation at 400 nm with fluence ...
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Article
Ultrafast carrier dynamics in Inx Ga1-x N (0001) epilayers: Effects of high fluence excitation
(2006)Ultrafast carrier dynamics in Inx Ga1-x N (0001) epilayers were investigated, using femtosecond transient differential transmission and reflection measurements for x=0.07, 0.15, and 0.33, over a fluence range of 1-12 mJ ...