Browsing Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering by Author "Zervos, Matthew"
Now showing items 21-40 of 65
-
Article
Experimental observation of the de haas–van alphen effect in a multiband quantum-well sample
Shepherd, R. A.; Elliott, M.; Herrenden-Harker, W. G.; Zervos, Matthew; Morris, P. R. (1999)We report measurements of magnetic quantum oscillations (the de Haas–van Alphen effect) in a quantum well containing more than one subband. The Fourier transform of the magnetization oscillations shows the expected frequencies ...
-
Article
Femtosecond carrier dynamics in In 2O 3 nanocrystals
Othonos, A.; Zervos, Matthew; Tsokkou, D. (2009)We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...
-
Article
Gallium hydride vapor phase epitaxy of GaN nanowires
Zervos, Matthew; Othonos, A. (2011)Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
-
Article
High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition
Zervos, Matthew; Papageorgiou, P.; Othonos, A. (2010)Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...
-
Book Chapter
Hybrid metal nanoparticle-semiconductor nanowire assemblies: Synthesis, properties and applications
Krasia-Christoforou, T.; Zervos, Matthew (Nova Science Publishers, Inc., 2013)Hybrid, semiconductor nanowire - metal nanoparticle assemblies have been investigated extensively in the context of nanotechnology for the development of novel sensors, solar cells, memory, energy storage and catalysis ...
-
Article
Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2
Zervos, Matthew; Othonos, A. (2010)High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH3 and N2:H2 at 900 °C. These exhibited ...
-
Article
InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
Zervos, Matthew; Xenogianni, C.; Deligeorgis, G.; Androulidaki, M.; Savvidis, P. G.; Hatzopoulos, Z.; Pelekanos, N. T. (2006)InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
-
Article
Influence of polarization field on the lasing properties of III-nitride quantum wells
Dialynas, G. E.; Deligeorgis, G.; Zervos, Matthew; Pelekanos, N. T. (2006)A theoretical investigation of the effect of polarization-induced fields on the optoelectronic properties of a 3 nm In0.2Ga0.8N/GaN single quantum well has been carried out via a self-consistent solution of Schrödinger-Poisson ...
-
Article
Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers
Dialynas, G. E.; Deligeorgis, G.; Zervos, Matthew; Pelekanos, N. T. (2008)A theoretical investigation of Inx Ga1-x N/GaN single quantum well lasers with x in the range 0.05≤x≤0.3 is carried out via self-consistent Schrödinger-Poisson calculations in the effective mass approximation in order to ...
-
Article
Investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self-consistent Poisson-Schrödinger calculations and capacitance-voltage profiling
Zervos, Matthew; Kostopoulos, A.; Constantinidis, G.; Kayambaki, M.; Georgakilas, A. (2002)The two-dimensional electron gas (2DEG) distribution and conduction-band profile tailoring of the Al xGa 1-xN/GaN/Al yGa 1-yN/GaN double heterostructure (DH) has been studied in detail by self-consistent Poisson-Schrödinger ...
-
Article
An investigation into the conversion of In2O3 into InN nanowires
Papageorgiou, P.; Zervos, Matthew; Othonos, A. (2011)Straight In2O3 nanowires (NWs) with diameters of 50 nm and lengths ≥2 μm have been grown on Si(001) via the wet oxidation of In at 850°C using Au as a catalyst. These exhibited clear peaks in the X-ray diffraction corresponding ...
-
Article
Investigation of Different Si(111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma-Assisted MBE
Androulidaki, M.; Georgakilas, A.; Peiro, F.; Amimer, K.; Zervos, Matthew; Tsagaraki, K.; Dimakis, M.; Cornet, A. (2001)The in-situ low temperature preparation of hydrogen passivated Si(111) surfaces has been investigated for GaN growth by rf-plasma source molecular beam epitaxy. The GaN/Si heterostructures were analyzed by transmission ...
-
Article
Investigation of spin-polarized resonant tunneling through double-barrier magnetic tunnel junctions by self-consistent solution of the Poisson-Schrödinger equations
Zervos, Matthew (2003)The article discusses the investigation of spin-polarized resonant tunneling through double barrier magnetic tunnel junctions (DBMTJ) by the self-consistent solution of Poissons and Schrödingers equations using transfer ...
-
Article
Light-induced mobility enhancement in delta-doped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)
Zervos, Matthew; Elliott, M.; Westwood, D. I. (1999)Persistent photoconductivity in 80 angstroms strained GaAs/In0.26Ga0.74As/GaAs quantum wells was investigated by measuring the Shubnikov de Haas and Hall effects at 4.2 K. The quantum wells were grown by molecular beam ...
-
Article
Low temperature growth of In 2O 3 and InN nanocrystals on Si(111) via chemical vapour deposition based on the sublimation of NH 4Cl in In
Zervos, Matthew; Tsokkou, D.; Pervolaraki, M.; Othonos, A. (2009)Indium oxide (In 2O 3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O 2 at 1000 °C but also at temperatures as low ...
-
Article
Magnetotransport of delta-doped In0.57Ga0.43As on InP(001) grown between 390 and 575°C by molecular beam epitaxy
Zervos, Matthew; Bryant, A.; Elliott, M.; Beck, M.; Ilegems, M. (1998)Silicon (Si) delta- (δ-) doped In0.53Ga0.47As layers were grown by molecular beam epitaxy on InP(001) substrates between 390°C and 575°C. Subbands formed at the δ layer were examined with Hall and Shubnikov-de Haas effect ...
-
Article
The nitridation of ZnO nanowires
Zervos, Matthew; Karipi, C.; Othonos, A. (2012)ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. ...
-
Article
Optical and electrical properties of selectively delta-doped strained InxGa1-xAs/GaAs quantum wells
Ke, M. L.; Chen, X.; Zervos, Matthew; Nawaz, R.; Elliott, M.; Westwood, D. I.; Blood, P.; Godfrey, M. J.; Williams, R. H. (1996)We report here an investigation of selectively delta-doped strained InGaAs/GaAs quantum wells. Electronic structures of the systems were calculated by self-consistently solving the Schrödinger and Poisson equations and the ...
-
Article
Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission
Zervos, Matthew; Othonos, A.; Gianetta, V.; Nassiopoulou, A. G. (2016)We have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we ...
-
Article
The Pinch-Off Behaviour and Charge Distribution in AlGaN-GaN-AlGaN-GaN Double Heterostructure Field Effect Transistors
Zervos, Matthew; Kostopoulos, A.; Constantinidis, G.; Kayambaki, M.; Mikroulis, S.; Flytzanis, N.; Georgakilas, A. (2001)AlxGa1-xN/GaN/AlyGa1-yN/GaN double heterojunction field effect transistors with bottom AlyGa1-yN barrier widths between 100 and 2000 Å and Al contents of y = 0.15-0.3 were grown by radio-frequency molecular beam epitaxy ...