Browsing Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering by Author "Zervos, Matthew"
Now showing items 41-60 of 65
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Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping
Zervos, Matthew (2013)The properties of the core-shell p-n junction in GaAs nanowires have been investigated via the self-consistent solution of the Poisson-Schrödinger equations in cylindrical coordinates and the effective mass approximation ...
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Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN
Iliopoulos, E.; Zervos, Matthew; Adikimenakis, A.; Tsagaraki, K.; Georgakilas, A. (2006)Silicon-doped GaN epilayers and AlGaN/GaN heterostructures were developed by nitrogen plasma-assisted molecular beam epitaxy on high resistivity iron-doped GaN (0001) templates and their properties were investigated by ...
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Properties of the ubiquitous p-n junction in semiconductor nanowires
Zervos, Matthew (2008)The properties of nanowires with built-in p-n junctions such as the energetic position of the one-dimensional sub-bands, charge distributions and band bending in equilibrium are determined by the self-consistent solution ...
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Residual Doping Effects on the Amplitude of Polarization-Induced Electric fields in GaN/AlGaN Quantum Wells
Simon, J.; Langer, R.; Barski, A.; Zervos, Matthew; Pelekanos, N. T. (2001)We show that residual doping and carrier distribution effects decrease the observed polarization-induced electric fields in GaN/AlGaN quantum wells and that these effects ought to be considered if we want to compare in a ...
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Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting
Zervos, Matthew; Othonos, A.; Gianneta, V.; Travlos, A.; Nassiopoulou, A. G. (2015)Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor-liquid-solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1-2 at. ...
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Sn:In2O3 and Sn:In2O3/NiS2 Core-Shell Nanowires on Ni, Mo Foils and C Fibers for H2 and O2 Generation
Zervos, Matthew; Leontidis, E.; Tanasǎ, E.; Vasile, E.; Othonos, A. (2017)Sn:In2O3 nanowires have been grown by the vapor liquid solid mechanism on Si, Ni, Mo, and C fibers. These were used to obtain Sn:In2O3/NiS2 core-shell nanowires by the deposition of 10 nm Ni over the Sn:In2O3 nanowires ...
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SnO2/PbOx (x = 1, 2) Core–Shell Nanowires and Their Growth on C-Fiber Networks for Energy Storage
Zervos, Matthew; Othonos, Andreas; Tanasă, Eugenia; Vasile, Eugeniu; Leontidis, Epameinondas (2018)SnO2 nanowires were grown on Si, fused SiO2, and C fibers by the vapor–liquid–solid mechanism at 800 °C and 10–1 mbar, and SnO2/PbO core–shell nanowires were obtained by the deposition of 50 nm Pb over the SnO2 nanowires ...
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Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution
Zervos, Matthew; Othonos, A.; Tsokkou, D.; Kioseoglou, J.; Pavlidou, E.; Komninou, P. (2013)Tin oxide (SnO2) nanowires (NWs) with diameters of 50 nm, lengths up to 100 μm and a tetragonal rutile crystal structure have been grown by low pressure reactive vapour transport on 1 nm Au/Si(001). The free carrier density ...
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Sulfur doping of M/In2O3 (M=Al,W) nanowires with room temperature near infra red emission
Zervos, Matthew; Mihailescu, C.; Giapintzakis, John; Othonos, A.; Travlos, A. (2015)We have investigated the growth of Al doped In2O3 nanowires via the vapor-liquid-solid mechanism at 800°C using Au as a catalyst. We find that the Al is not incorporated into the cubic bixbyite crystal structure of In2O3 ...
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Surface micro-roughness and transport properties of Si delta-doped GaAs/InxGa1-xAs/GaAs (0.1≤x≤0.25) quantum wells grown by molecular-beam epitaxy on GaAs (001) and GaAs (111)B
Zervos, Matthew; Elliott, M.; Westwood, D. I. (1999)We investigated the surface quality and electron transport properties of 200 Å GaAs/InxGa1-xAs/GaAs, 0.1≤x≤0.25, quantum well structures grown by molecular-beam epitaxy on GaAs (001) and (111)B, center delta-doped with Si ...
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Surface passivation and conversion of SnO2 to SnS2 nanowires
Zervos, Matthew; Mihailescu, C. N.; Giapintzakis, John; Othonos, A.; Luculescu, C. R. (2015)SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...
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Synthesis of hybrid polymethacrylate-noble metal (M = Au, Pd) nanoparticles for the growth of metal-oxide semiconductor nanowires
Zervos, Matthew; Demetriou, M.; Krasia-Christoforou, T.; Othonos, A.; Turcu, R. P. (2012)Metal-oxide semiconductor nanowires (NWs) such as ZnO, β-Ga 2O 3 and SnO 2 with diameters of tens of nanometres and lengths of many micrometres have been grown using micellar nanohybrids consisting of methacrylate-based ...
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Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition
Zervos, Matthew; Othonos, A. (2009)Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...
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A systematic investigation into the conversion of Β-Ga 2O3 to GaN nanowires using NH3 and H 2: Effects on the photoluminescence properties
Othonos, A.; Zervos, Matthew; Christofides, C. (2010)GaN nanowires (NWs) with a hexagonal wurtzite crystal structure, diameters of 50 nm and lengths of 10 μm have been obtained from postgrowth nitridation of monoclinic Β-Ga2O3 NWs using NH3 between 700-1090 °C. The conversion ...
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A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
Zervos, Matthew; Othonos, A. (2012)SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...
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Article
Thermal oxidation and facet-formation mechanisms of Si nanowires
Kioseoglou, J.; Komninou, P.; Zervos, Matthew (2014)Silicon nanowires were grown along the [111] direction on Si(001) by the vapor-liquid-solid mechanism using 1 nm Au as a catalyst. They were subsequently oxidized at 900 °C for 60 min, 120 min and 180 min, which lead to ...
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Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation
Othonos, A.; Zervos, Matthew; Tsokkou, D. (2009)We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...
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Ultrafast carrier relaxation in inn nanowires grown by reactive vapor transport
Othonos, A.; Zervos, Matthew; Pervolaraki, M. (2009)We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated ...
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Ultrafast hole carrier relaxation dynamics in p-type CuO nanowires
Othonos, A.; Zervos, Matthew (2011)Ultrafast hole carrier relaxation dynamics in CuO nanowires have been investigated using transient absorption spectroscopy. Following femtosecond pulse excitation in a non-collinear pump-probe configuration, a combination ...
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Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 Nanowires
Othonos, K. M.; Zervos, Matthew; Christofides, C.; Othonos, A. (2015)Ultrafast pump-probe and transient photoluminescence spectroscopy were used to investigate carrier dynamics in β-Ga2O3 nanowires converted to β-Ga2O3/Ga2S3 under H2S between 400 to 600 °C. The β-Ga2O3 nanowires exhibited ...