Browsing Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering by Subject "Hall effect"
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Conference Object
Doping and alloying trends in new thermoelectric materials
(Affiliation: Dept. of Elec. and Comp. Engineering, Michigan State University, East Lansing, MI, United StatesCorrespondence Address: Loo, S.Dept. of Elec. and Comp. Engineering, Michigan State University, East Lansing, MI, United States, 2002)New thermoelectric bulk materials such as CsBi4Te6 have shown superior properties to traditional materials, however, optimal performance requires continuing investigations of doping and alloying trends. A recently modified ...
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Article
Hall effect in detwinned single crystals of YBa2(Cu1-xZnx)3O7-δ in the mixed state
(1996)The effect of zinc doping on the mixed-state Hall effect in detwinned single crystals of YBa2Cu3O7-δ has been studied. We observe a sign reveral of the Hall effect in crystals with a superconducting transition temperature ...
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Article
Hall effect study of magnetoresistive perovskite LaNi0.5Co 0.5O3 thin films
(2004)We report on the Hall effect of LaNi0.5Co0.5O 3 magnetoresistive thin films grown on Si(100) substrates by pulsed laser deposition. The Hall resistivity exhibits sign reversals both in varying magnetic field and temperature, ...
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Article
Inhomogeneities and Effective Mass in Doped Mg2Si
(2016)Magnesium silicide (Mg2Si)-based materials are promising candidates as thermoelectric components for mid-temperature range (500–900 K) energy conversion. Many different approaches for determining the parabolicity of the ...
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Article
Large positive magnetoresistance in nonstoichiometric NiMnSb thin films on silicon
(2004)The transport properties of pulsed-laser-deposited NiMnSb films on silicon as a function of film thickness were discussed. It was found that a low-temperature upturn was observed in the resistivity for film thicknesses of ...
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Article
Light-induced mobility enhancement in delta-doped GaAs/In0.26Ga0.74As/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001)
(1999)Persistent photoconductivity in 80 angstroms strained GaAs/In0.26Ga0.74As/GaAs quantum wells was investigated by measuring the Shubnikov de Haas and Hall effects at 4.2 K. The quantum wells were grown by molecular beam ...
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Article
Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN
(2006)Silicon-doped GaN epilayers and AlGaN/GaN heterostructures were developed by nitrogen plasma-assisted molecular beam epitaxy on high resistivity iron-doped GaN (0001) templates and their properties were investigated by ...
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Article
Sign reversal of the Hall effect in YBa2(Cu1-x)3O7-δ single crystals
(1995)We have measured the in-plane Hall effect and in-plane resistivity of cobalt-doped YBa2Cu3O7-δ (YBCO) single-crystal samples. The concentration of cobalt ranged from 1 to 3%. As the applied field was varied, a sign reversal ...
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Article
Spin polarisation and anomalous Hall effect in NiMnSb films
(2004)NiMnSb has attracted a great deal of interest as a spin injector/detector in spintronic devices because it has a Curie temperature of 728 K and is predicted to be half-metallic (100% spin polarized). NiMnSb has been reported ...
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Article
Thermoelectric properties and site-selective Rb+/K+ distribution in the K2-xRbxBi8Se13 series
(2003)β-K2Bi8Se13 possesses promising thermoelectric properties whereas Rb2Bi8Se13 does not. The formation of solid solutions between these two compounds was attempted to study the alkali metal distribution in the structure and ...