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Investigation of Different Si(111) Surface Preparation Methods for the Heteroepitaxy of GaN by Plasma-Assisted MBE
(2001)
The in-situ low temperature preparation of hydrogen passivated Si(111) surfaces has been investigated for GaN growth by rf-plasma source molecular beam epitaxy. The GaN/Si heterostructures were analyzed by transmission ...
Effects of the Sapphire Nitridation on the Polarity and Structural Properties of GaN Layers Grown by Plasma-Assisted MBE
(2001)
The nitridation of the (0001) sapphire surface by a nitrogen rf-plasma source used in GaN molecular beam epitaxy has been investigated. Auger electron spectroscopy measurements were used to estimate the extent of the ...
Properties of Si-doped GaN and AlGaN/GaN heterostructures grown by RF-MBE on high resistivity Fe-doped GaN
(2006)
Silicon-doped GaN epilayers and AlGaN/GaN heterostructures were developed by nitrogen plasma-assisted molecular beam epitaxy on high resistivity iron-doped GaN (0001) templates and their properties were investigated by ...
Residual Doping Effects on the Amplitude of Polarization-Induced Electric fields in GaN/AlGaN Quantum Wells
(2001)
We show that residual doping and carrier distribution effects decrease the observed polarization-induced electric fields in GaN/AlGaN quantum wells and that these effects ought to be considered if we want to compare in a ...
Ultrafast time-resolved spectroscopy of In2 O3 nanowires
(2009)
Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...
InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
(2006)
InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires
(2004)
The numerical self-consistent solution of the Poisson-Schrodinger equations in cylindrical coordinates for calculating electronic states in the effective mass approximation was implemented. High accuracy and rapid convergence ...
Influence of polarization field on the lasing properties of III-nitride quantum wells
(2006)
A theoretical investigation of the effect of polarization-induced fields on the optoelectronic properties of a 3 nm In0.2Ga0.8N/GaN single quantum well has been carried out via a self-consistent solution of Schrödinger-Poisson ...
Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers
(2008)
A theoretical investigation of Inx Ga1-x N/GaN single quantum well lasers with x in the range 0.05≤x≤0.3 is carried out via self-consistent Schrödinger-Poisson calculations in the effective mass approximation in order to ...
Femtosecond carrier dynamics in In 2O 3 nanocrystals
(2009)
We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...