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Very high thermoelectric power factor in a Fe3O4/SiO2/p-type Si(100) heterostructure
(2012)
The thermoelectric and transport properties of a Fe3O4/SiO2/p-Si(100) heterostructure have been investigated between 100 and 300 K. Both Hall and Seebeck coefficients change sign from negative to positive with increasing ...
The Effect of Ge on Mg2Si0.6−x Sn0.4Ge x Materials
(2014)
In this work, we investigate the influence of the introduction of Ge on the thermoelectric properties of Bi-doped quaternary Mg2Si0.6−x Sn0.4Ge x alloys. Mg2Si0.58−x Sn0.4Bi0.02Ge x materials were fabricated by a low ...
Evidence for dx2-y2 pairing from the magnetic field modulation of YBa2Cu3O7-Pb Josephson junctions
(1995)
We have measured the magnetic field modulation of the critical current of YBCO-Au-Pb Josephson junctions fabricated on the a and b edges and straddling the a-b corners of YBCO single crystals. In corner junctions, the ...
Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires
(2015)
Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
Current transport and thermoelectric properties of very high power factor Fe3O4/SiO2/p-type Si(001) devices
(2014)
The current transport and thermoelectric properties of Fe3O4/SiO2/p-type Si(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300K. We observe a sharp drop of the ...
Surface passivation and conversion of SnO2 to SnS2 nanowires
(2015)
SnO2 nanowires have been grown on Si(0 0 1) via the vapour-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 and 600 °C. The SnS2/SnO2 nanowires obtained at 300 °C consist of tetragonal rutile SnO2 and ...
Broad compositional tunability of indium tin oxide nanowires grown by the vapor-liquid-solid mechanism
(2014)
Indium tin oxide nanowires were grown by the reaction of In and Sn with O2 at800 °C via the vapor-liquid-solid mechanism on 1 nm Au/Si(001). We obtain Sn doped In2O3 nanowires having a cubic bixbyite crystal structure by ...
Near critical behavior in the two-dimensional spin-gap system SrCu2(BO3)2
(2002)
The temperature dependence of the powdered X-band ESR spectra has been measured in a two-dimensional spin-gap system SrCu2(BO3)2 in the temperature range between 5 and 300 K. The spectra are composed of two overlapping ...
Effect of vacancy doping on the Haldane spin-liquid state in PbNi2-xMgxV2O8
(2002)
The effect of spin-vacancy doping on the ground state of the quasi-one-dimensional S=1 quantum antiferromagnet PbNi2V2O8 is studied by X band as well as high-field ESR. A very broad ESR line is observed at low temperatures ...