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Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)
Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
Properties of the ubiquitous p-n junction in semiconductor nanowires
(2008)
The properties of nanowires with built-in p-n junctions such as the energetic position of the one-dimensional sub-bands, charge distributions and band bending in equilibrium are determined by the self-consistent solution ...
Delta(δ)-doping of semiconductor nanowires
(2013)
The electronic sub-band structure of single δ-layers in GaAs nanowires have been determined via the self-consistent solution of the Poisson-Schrödinger equations in the effective mass approximation. The spread and sheet ...
Electronic properties of core-shell nanowire resonant tunneling diodes
(2014)
The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP ...
Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping
(2013)
The properties of the core-shell p-n junction in GaAs nanowires have been investigated via the self-consistent solution of the Poisson-Schrödinger equations in cylindrical coordinates and the effective mass approximation ...
Synthesis of hybrid polymethacrylate-noble metal (M = Au, Pd) nanoparticles for the growth of metal-oxide semiconductor nanowires
(2012)
Metal-oxide semiconductor nanowires (NWs) such as ZnO, β-Ga 2O 3 and SnO 2 with diameters of tens of nanometres and lengths of many micrometres have been grown using micellar nanohybrids consisting of methacrylate-based ...
Sn:In2O3 and Sn:In2O3/NiS2 Core-Shell Nanowires on Ni, Mo Foils and C Fibers for H2 and O2 Generation
(2017)
Sn:In2O3 nanowires have been grown by the vapor liquid solid mechanism on Si, Ni, Mo, and C fibers. These were used to obtain Sn:In2O3/NiS2 core-shell nanowires by the deposition of 10 nm Ni over the Sn:In2O3 nanowires ...
A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
(2012)
SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...
Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires
(2015)
Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation
(2008)
A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement ...