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Ultrafast Spectroscopy and Red Emission from β-Ga2O3/β-Ga2S3 Nanowires
(2015)
Ultrafast pump-probe and transient photoluminescence spectroscopy were used to investigate carrier dynamics in β-Ga2O3 nanowires converted to β-Ga2O3/Ga2S3 under H2S between 400 to 600 °C. The β-Ga2O3 nanowires exhibited ...
Ultrafast carrier relaxation in inn nanowires grown by reactive vapor transport
(2009)
We have studied femtosecond carrier dynamics in InN nanowires grown by reactive vapor transport. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photogenerated ...
Ultrafast transient spectroscopy and photoluminescence properties of V 2O5 nanowires
(2013)
The properties of V2O5 semiconductor nanowires have been investigated using ultrashort transient absorption spectroscopy in conjunction with time resolved photoluminescence. Femtosecond pulse excitation has been utilized ...
Low temperature growth of In 2O 3 and InN nanocrystals on Si(111) via chemical vapour deposition based on the sublimation of NH 4Cl in In
(2009)
Indium oxide (In 2O 3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O 2 at 1000 °C but also at temperatures as low ...
Defect states of chemical vapor deposition grown GaN nanowires: Effects and mechanisms in the relaxation of carriers
(2009)
Carrier relaxation in GaN nanowires, grown by atmospheric pressure chemical vapor deposition, via direct nitridation of Ga with NH3 at 950 °C has been investigated in detail. Differential absorption measurements reveal a ...
Very high thermoelectric power factor in a Fe3O4/SiO2/p-type Si(100) heterostructure
(2012)
The thermoelectric and transport properties of a Fe3O4/SiO2/p-Si(100) heterostructure have been investigated between 100 and 300 K. Both Hall and Seebeck coefficients change sign from negative to positive with increasing ...
Properties of the ubiquitous p-n junction in semiconductor nanowires
(2008)
The properties of nanowires with built-in p-n junctions such as the energetic position of the one-dimensional sub-bands, charge distributions and band bending in equilibrium are determined by the self-consistent solution ...
Delta(δ)-doping of semiconductor nanowires
(2013)
The electronic sub-band structure of single δ-layers in GaAs nanowires have been determined via the self-consistent solution of the Poisson-Schrödinger equations in the effective mass approximation. The spread and sheet ...
Electronic properties of core-shell nanowire resonant tunneling diodes
(2014)
The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP ...
Properties and tailoring of the ubiquitous core-shell p-n junction in semiconductor nanowires by δ-doping
(2013)
The properties of the core-shell p-n junction in GaAs nanowires have been investigated via the self-consistent solution of the Poisson-Schrödinger equations in cylindrical coordinates and the effective mass approximation ...