Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering: Recent submissions
Now showing items 181-200 of 1036
-
Article
InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
(2006)InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
-
Article
Low temperature growth of In 2O 3 and InN nanocrystals on Si(111) via chemical vapour deposition based on the sublimation of NH 4Cl in In
(2009)Indium oxide (In 2O 3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O 2 at 1000 °C but also at temperatures as low ...
-
Article
Current transport in semiconductor nanowires with built-in barriers based on a 1D transfer matrix calculation
(2008)A one dimensional (1D) transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers is described within the effective mass approximation by taking into account (i) the quantum confinement ...
-
Article
Current transport and thermoelectric properties of very high power factor Fe3O4/SiO2/p-type Si(001) devices
(2014)The current transport and thermoelectric properties of Fe3O4/SiO2/p-type Si(001) heterostructures with Fe3O4 thicknesses of 150, 200, and 350 nm have been investigated between 100 and 300K. We observe a sharp drop of the ...
-
Article
Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires in quantum dot sensitized solar cells
(2017)Core-shell PbS/Sn:In2O3 and branched PbIn2S4/Sn:In2O3 nanowires have been obtained via the deposition of Pb over Sn:In2O3 nanowires and post growth processing under H2S between 100 C-200 C and 300 C-500 C respectively. The ...
-
Article
High yield-low temperature growth of indium sulphide nanowires via chemical vapor deposition
(2010)Indium sulphide nanowires (NWs) have been grown on Si via the reaction of In and InCl3 with H2S using chemical vapor deposition at temperatures as low as 250 °C. We find that the growth of InxSy NWs via the direct reaction ...
-
Article
An inverse method to assign receptances by using classical vibration absorbers
(2009)The classical mass-spring absorber can be thought of as a very simple structural modification. In this paper the inverse problem of assigning receptances to a dynamic system by using one or more simple mass-spring absorbers ...
-
Article
Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting
(2015)Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor-liquid-solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1-2 at. ...
-
Article
A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism
(2012)SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear ...
-
Article
Synthesis of Tin nitride Sn xN y nanowires by chemical vapour deposition
(2009)Tin nitride (Sn xN y) nanowires have been grown for the first time by chemical vapour deposition on n-type Si(111) and in particular by nitridation of Sn containing NH 4Cl at 450 °C under a steady flow of NH 3. The Sn xN ...
-
Article
Pb doping of In2O3 and their conversion to highly conductive PbS/In2S3-3xO3x nanowires with infra red emission
(2016)We have grown Pb doped In2O3 nanowires at 800°C which have the cubic bixbyite crystal structure of In2O3 and contain orthorhombic α-PbO. These had resistances up to ≈10 Ω and exhibited photoluminescence at 2.5 eV but we ...
-
Article
Structural properties of SnO2 nanowires and the effect of donor like defects on its charge distribution
(2013)Tin oxide (SnO2) nanowires (NWs) with diameters of 50 nm, lengths up to 100 μm and a tetragonal rutile crystal structure have been grown by low pressure reactive vapour transport on 1 nm Au/Si(001). The free carrier density ...
-
Article
Enhanced growth and photoluminescence properties of SnxN y (x>y) nanowires grown by halide chemical vapor deposition
(2011)Tin nitride nanowires have been grown by halide chemical vapor deposition via the reaction of Sn with NH4Cl at 425 °C under a steady flow of NH3 using small ramp rates y) with a hexagonal structure, i.e. c=5.193 , a=3.725 ...
-
Article
Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2
(2010)High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH3 and N2:H2 at 900 °C. These exhibited ...
-
Article
Gallium hydride vapor phase epitaxy of GaN nanowires
(2011)Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 ...
-
Article
Sulfur doping of M/In2O3 (M=Al,W) nanowires with room temperature near infra red emission
(2015)We have investigated the growth of Al doped In2O3 nanowires via the vapor-liquid-solid mechanism at 800°C using Au as a catalyst. We find that the Al is not incorporated into the cubic bixbyite crystal structure of In2O3 ...
-
Article
Sn:In2O3 and Sn:In2O3/NiS2 Core-Shell Nanowires on Ni, Mo Foils and C Fibers for H2 and O2 Generation
(2017)Sn:In2O3 nanowires have been grown by the vapor liquid solid mechanism on Si, Ni, Mo, and C fibers. These were used to obtain Sn:In2O3/NiS2 core-shell nanowires by the deposition of 10 nm Ni over the Sn:In2O3 nanowires ...
-
Article
Investigation into the charge distribution and barrier profile tailoring in AlGaN/GaN double heterostructures by self-consistent Poisson-Schrödinger calculations and capacitance-voltage profiling
(2002)The two-dimensional electron gas (2DEG) distribution and conduction-band profile tailoring of the Al xGa 1-xN/GaN/Al yGa 1-yN/GaN double heterostructure (DH) has been studied in detail by self-consistent Poisson-Schrödinger ...
-
Article
Electrical, structural, and optical properties of sulfurized Sn-doped In2O3 nanowires
(2015)Sn-doped In2O3 nanowires have been grown on Si via the vapor-liquid-solid mechanism at 800 °C and then exposed to H2S between 300 to 600 °C. We observe the existence of cubic bixbyite In2O3 and hexagonal SnS2 after processing ...
-
Article
The Pinch-Off Behaviour and Charge Distribution in AlGaN-GaN-AlGaN-GaN Double Heterostructure Field Effect Transistors
(2001)AlxGa1-xN/GaN/AlyGa1-yN/GaN double heterojunction field effect transistors with bottom AlyGa1-yN barrier widths between 100 and 2000 Å and Al contents of y = 0.15-0.3 were grown by radio-frequency molecular beam epitaxy ...