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dc.contributor.authorOthonos, A.en
dc.contributor.authorZervos, Matthewen
dc.creatorOthonos, A.en
dc.creatorZervos, Matthewen
dc.date.accessioned2019-05-06T12:24:14Z
dc.date.available2019-05-06T12:24:14Z
dc.date.issued2010
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48668
dc.description.abstractTransient femtosecond absorption spectroscopy and timecorrelating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the relaxation mechanisms in these nanostructures. Intensity dependent measurements revealed that Auger recombination plays an important role in the relaxation of photogenerated carriers at fluences larger than 0.4×10 15 photons/cm 2. Calculations provided an estimated of the Auger recombination coefficient to be 1.1±0.5×10 -31 cm 6/s. At the low fluence regime TCSPC PL revealed three relaxation mechanisms with time constants ranging from ps to nanosecond providing evidence of the importance of non-radiative decay channels associated with defect/trap states within the NWs. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.language.isoengen
dc.sourcePhysica Status Solidi (A) Applications and Materials Scienceen
dc.subjectDynamicsen
dc.subjectAbsorptionen
dc.subjectNanowiresen
dc.subjectRelaxation mechanismen
dc.subjectCarrier dynamicsen
dc.subjectPhotogenerated carriersen
dc.subjectPhotonsen
dc.subjectTime constantsen
dc.subjectAbsorption spectroscopyen
dc.subjectAuger recombinationen
dc.subjectAugersen
dc.subjectChemical vapor depositionen
dc.subjectFluencesen
dc.subjectInSen
dc.subjectIntensity-dependenten
dc.subjectNonradiative decaysen
dc.subjectParticle beamsen
dc.subjectSingle photon countingen
dc.subjectTime-correlating single photon countingen
dc.subjectTransient absorption spectroscopyen
dc.titleCarrier dynamics in InS nanowires grown via chemical vapor depositionen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1002/pssa.201026048
dc.description.volume207
dc.description.startingpage2258
dc.description.endingpage2262
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidZervos, Matthew [0000-0002-6321-233X]
dc.description.totalnumpages2258-2262
dc.gnosis.orcid0000-0002-6321-233X


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