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dc.contributor.authorOthonos, A.en
dc.contributor.authorZervos, Matthewen
dc.creatorOthonos, A.en
dc.creatorZervos, Matthewen
dc.date.accessioned2019-05-06T12:24:14Z
dc.date.available2019-05-06T12:24:14Z
dc.date.issued2009
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48669
dc.description.abstractCarrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had diameters 200 nm and lengths up to 2 μm. Steady state optical transmission measurements suggest that the band gap is ∼2.9 eV while time resolved measurements reveal that free carrier absorption dominates the carrier dynamics and overcomes state filling within 0.5 ps of the incoming excitation pulse even when probing above the band edge. This is a unique and markedly different behavior compared to what we have observed in other semiconductor nanowires and it is attributed to fast scattering of the photogenerated carriers out of the excitation energy region and possible rise in the lattice temperature due to energy relaxation. Carrier relaxation occurs through two channels with a fast time constants of ≈200 ps and a slow time constant ranging between 5 and 8 ns while intensity measurements reveal negligible contribution from nonlinear effects such as Auger recombination. © 2009 American Institute of Physics.en
dc.language.isoengen
dc.sourceJournal of Applied Physicsen
dc.subjectLight transmissionen
dc.subjectAbsorptionen
dc.subjectOxide mineralsen
dc.subjectNitridesen
dc.subjectQuartzen
dc.subjectNanowiresen
dc.subjectTinen
dc.subjectBand gapsen
dc.subjectSemiconductor nanowireen
dc.subjectCarrier dynamicsen
dc.subjectCarrier relaxationen
dc.subjectIntensity measurementsen
dc.subjectPhotogenerated carriersen
dc.subjectRelaxation processesen
dc.subjectState-fillingen
dc.subjectTime constantsen
dc.subjectAbsorption spectroscopyen
dc.subjectAuger recombinationen
dc.subjectChemical vapor depositionen
dc.subjectBand edgeen
dc.subjectCarrier relaxation dynamicsen
dc.subjectElectric wireen
dc.subjectEnergy relaxationen
dc.subjectExcitation pulseen
dc.subjectFemtosecond transient absorption spectroscopyen
dc.subjectFree carrier absorptionen
dc.subjectLattice temperaturesen
dc.subjectNonlinear effecten
dc.subjectOptical transmission measurementsen
dc.subjectSteady stateen
dc.subjectTime resolved measurementen
dc.subjectTin nitrideen
dc.subjectTwo channelen
dc.titleCarrier relaxation dynamics in SnxNy nanowires grown by chemical vapor depositionen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1063/1.3264721
dc.description.volume106
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidZervos, Matthew [0000-0002-6321-233X]


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