Carrier dynamics in Β-Ga2O3 nanowires
dc.contributor.author | Othonos, A. | en |
dc.contributor.author | Zervos, Matthew | en |
dc.contributor.author | Christofides, C. | en |
dc.creator | Othonos, A. | en |
dc.creator | Zervos, Matthew | en |
dc.creator | Christofides, C. | en |
dc.date.accessioned | 2019-05-06T12:24:14Z | |
dc.date.available | 2019-05-06T12:24:14Z | |
dc.date.issued | 2010 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48670 | |
dc.description.abstract | Carrier dynamics have been investigated in Β-Ga2O 3 nanowires (NWs) grown by the vapor-liquid-solid mechanism, using ultrashort transient absorption spectroscopy in conjunction with time-correlating single photon counting photoluminescence. UV femtosecond pulse excitation has been utilized to generate nonequilibrium carrier distributions near the band edge of the NWs and nondegenerate pump-probe techniques have been employed to follow carrier relaxation through the defect related states located within the band gap of the NW semiconductor. Relaxation of the photogenerated carriers through these states appears to be biexponential with a fast component on the order of 3-5 ps and the slower component around 40-90 ps depending on the states being probed. Transient absorption intensity measurements reveal that recombination mechanisms such as Auger and bimolecular become contributing factors to the relaxation dynamics for absorbed fluences larger than 90 μJ/cm2. In the low fluence regime, time-correlated single photon counting photoluminescence measurements revealed a nonradiative relaxation mechanism with time constants ranging from 0.6-1 ns and a radiative relaxation with a time constant of approximately 4 ns. © 2010 American Institute of Physics. | en |
dc.language.iso | eng | en |
dc.source | Journal of Applied Physics | en |
dc.subject | Dynamics | en |
dc.subject | Absorption | en |
dc.subject | Nanowires | en |
dc.subject | Photoluminescence | en |
dc.subject | Vapor-liquid-solid mechanism | en |
dc.subject | Band gaps | en |
dc.subject | Electromagnetic pulse | en |
dc.subject | Femtosecond pulse excitation | en |
dc.subject | Non-equilibrium carriers | en |
dc.subject | Transient absorption spectroscopies | en |
dc.subject | Carrier dynamics | en |
dc.subject | Carrier relaxation | en |
dc.subject | Photogenerated carriers | en |
dc.subject | Photons | en |
dc.subject | Time constants | en |
dc.subject | Time-correlated single photon counting | en |
dc.subject | Absorption spectroscopy | en |
dc.subject | Fluences | en |
dc.subject | Particle beams | en |
dc.subject | Single photon counting | en |
dc.subject | Band edge | en |
dc.subject | Biexponential | en |
dc.subject | Contributing factor | en |
dc.subject | Non-radiative relaxation | en |
dc.subject | Photoluminescence measurements | en |
dc.subject | Pump-probe technique | en |
dc.subject | Pumps | en |
dc.subject | Radiative relaxation | en |
dc.subject | Recombination mechanisms | en |
dc.subject | Relaxation dynamics | en |
dc.subject | Transient absorption | en |
dc.title | Carrier dynamics in Β-Ga2O3 nanowires | el |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1063/1.3520589 | |
dc.description.volume | 108 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.gnosis.orcid | 0000-0002-6321-233X |
Files in this item
Files | Size | Format | View |
---|---|---|---|
There are no files associated with this item. |