dc.contributor.author | Othonos, A. | en |
dc.contributor.author | Zervos, Matthew | en |
dc.contributor.author | Christofides, C. | en |
dc.creator | Othonos, A. | en |
dc.creator | Zervos, Matthew | en |
dc.creator | Christofides, C. | en |
dc.date.accessioned | 2019-05-06T12:24:15Z | |
dc.date.available | 2019-05-06T12:24:15Z | |
dc.date.issued | 2010 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48671 | |
dc.description.abstract | GaN nanowires (NWs) with a hexagonal wurtzite crystal structure, diameters of 50 nm and lengths of 10 μm have been obtained from postgrowth nitridation of monoclinic Β-Ga2O3 NWs using NH3 between 700-1090 °C. The conversion of Β-Ga2O3 to GaN NWs has been investigated in a systematic way by varying the temperature, gas flows and nitridation times using Ar or N2:10% H2. We find that nitridation is most effective at temperatures 900 °C using NH 3 with N2:10% H2 which promotes the efficient conversion of Β-Ga2O3 to GaN, resulting into the enhancement of the band edge emission, suppression of the broad-band photoluminescence (PL) related to oxygen defects and the appearance of red emission due to deep-acceptorlike states. The gradual evolution of the PL spectra from that of Β-Ga2O3 to GaN exhibited a clear, systematic dependence on the nitridation temperature and gas flows and the band to band emission lifetime which was found to be τ≈0.35 ns in all cases. In contrast the nitridation of Β-Ga2O3 NWs using NH3 and Ar is less effective. Therefore, H2 is essential in removing O2 and also effective since it lead to the complete elimination of the Β-Ga2O3 NWs at 1000 °C in the absence of NH3. © 2010 American Institute of Physics. | en |
dc.language.iso | eng | en |
dc.source | Journal of Applied Physics | en |
dc.subject | Hexagonal wurtzite | de |
dc.subject | Oxygen | en |
dc.subject | Crystal structure | en |
dc.subject | Nanowires | en |
dc.subject | Gallium nitride | en |
dc.subject | Photoluminescence | en |
dc.subject | Photoluminescence properties | en |
dc.subject | Band emission | en |
dc.subject | Band-edge emissions | en |
dc.subject | Broad-band photoluminescence | en |
dc.subject | Flow of gases | en |
dc.subject | Gallium alloys | en |
dc.subject | GaN nanowires | en |
dc.subject | Gas flows | en |
dc.subject | Nitridation | en |
dc.subject | Nitridation temperature | en |
dc.subject | Oxygen defect | en |
dc.subject | PL spectra | en |
dc.subject | Red emissions | en |
dc.subject | Systematic investigations | en |
dc.subject | Zinc sulfide | en |
dc.title | A systematic investigation into the conversion of Β-Ga 2O3 to GaN nanowires using NH3 and H 2: Effects on the photoluminescence properties | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1063/1.3525562 | |
dc.description.volume | 108 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.gnosis.orcid | 0000-0002-6321-233X | |