Thermoelectric properties of Bi0.5Sb1.5Te3 thin films grown by pulsed laser deposition
Date
2015Author
Symeou, E.Pervolaraki, M.
Mihailescu, C. N.
Athanasopoulos, G. I.
Papageorgiou, C.
Kyratsi, Theodora
Giapintzakis, John
Source
Applied Surface ScienceVolume
336Pages
138-142Google Scholar check
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We report on the pulsed laser deposition of p-type Bi0.5Sb1.5Te3 thin films onto fused silica substrates by ablation of dense targets of Bi0.5Sb1.5Te3 with an excess of 1 wt% Te. We investigated the effect of film thickness, substrate temperature and post-annealing duration on the thermoelectric properties of the films. Our results show that the best power factor (2780 μW/K2m at 300 K) is obtained for films grown at room temperature and then post-annealed in vacuum at 300 °C for 16 h. This is among the highest power factor values reported for Bi0.5Sb1.5Te3 films grown on fused silica substrates. © 2014 Elsevier B.V. All rights reserved.