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Thermoelectric properties of Bi0.5Sb1.5Te3 thin films grown by pulsed laser deposition

dc.contributor.authorSymeou, E.en
dc.contributor.authorPervolaraki, M.en
dc.contributor.authorMihailescu, C. N.en
dc.contributor.authorAthanasopoulos, G. I.en
dc.contributor.authorPapageorgiou, C.en
dc.contributor.authorKyratsi, Theodoraen
dc.contributor.authorGiapintzakis, Johnen
dc.creatorSymeou, E.en
dc.creatorPervolaraki, M.en
dc.creatorMihailescu, C. N.en
dc.creatorAthanasopoulos, G. I.en
dc.creatorPapageorgiou, C.en
dc.creatorKyratsi, Theodoraen
dc.creatorGiapintzakis, Johnen
dc.date.accessioned2019-05-06T12:24:44Z
dc.date.available2019-05-06T12:24:44Z
dc.date.issued2015
dc.identifier.urihttp://gnosis.library.ucy.ac.cy/handle/7/48888
dc.description.abstractWe report on the pulsed laser deposition of p-type Bi0.5Sb1.5Te3 thin films onto fused silica substrates by ablation of dense targets of Bi0.5Sb1.5Te3 with an excess of 1 wt% Te. We investigated the effect of film thickness, substrate temperature and post-annealing duration on the thermoelectric properties of the films. Our results show that the best power factor (2780 μW/K2m at 300 K) is obtained for films grown at room temperature and then post-annealed in vacuum at 300 °C for 16 h. This is among the highest power factor values reported for Bi0.5Sb1.5Te3 films grown on fused silica substrates. © 2014 Elsevier B.V. All rights reserved.en
dc.language.isoengen
dc.sourceApplied Surface Scienceen
dc.subjectThermoelectricityen
dc.subjectPulsed laser depositionen
dc.subjectThin filmsen
dc.subjectDepositionen
dc.subjectSubstratesen
dc.subjectPulsed lasersen
dc.subjectRoom temperatureen
dc.subjectThermoelectric propertiesen
dc.subjectThermoelectric equipmenten
dc.subjectElectric power factoren
dc.subjectPower factorsen
dc.subjectSubstrate temperatureen
dc.subjectAnnealingen
dc.subjectBismuth antimony tellurideen
dc.subjectBismuth-antimony tellurideen
dc.subjectFused silicaen
dc.subjectFused silica substratesen
dc.subjectIn-vacuumen
dc.subjectPost annealingen
dc.subjectSilicaen
dc.titleThermoelectric properties of Bi0.5Sb1.5Te3 thin films grown by pulsed laser depositionen
dc.typeinfo:eu-repo/semantics/article
dc.identifier.doi10.1016/j.apsusc.2014.10.038
dc.description.volume336
dc.description.startingpage138
dc.description.endingpage142
dc.author.facultyΠολυτεχνική Σχολή / Faculty of Engineering
dc.author.departmentΤμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering
dc.type.uhtypeArticleen
dc.contributor.orcidGiapintzakis, John [0000-0002-7277-2662]
dc.contributor.orcidKyratsi, Theodora [0000-0003-2916-1708]
dc.description.totalnumpages138-142
dc.gnosis.orcid0000-0002-7277-2662
dc.gnosis.orcid0000-0003-2916-1708


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