dc.contributor.author | Zervos, Matthew | en |
dc.contributor.author | Othonos, A. | en |
dc.creator | Zervos, Matthew | en |
dc.creator | Othonos, A. | en |
dc.date.accessioned | 2019-05-06T12:24:54Z | |
dc.date.available | 2019-05-06T12:24:54Z | |
dc.date.issued | 2012 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48970 | |
dc.description.abstract | SnO 2 nanowires (NWs) with diameters of 50 nm and lengths ≥10 μm have been grown at 800 °C on 1.0 nm Au/Si(001) via the vapor liquid solid mechanism and the low pressure chemical vapor deposition. These exhibited clear peaks in the X-ray diffraction corresponding to the tetragonal rutile crystal structure of SnO 2 and a broad-symmetric photoluminescence (PL) spectrum, centered around 560 nm due to structural-related defect states, energetically located in the upper half-band-gap of SnO 2. We find that post-growth thermal annealing of the SnO 2 NWs over a broad range of temperatures, i.e. 4001000 °C and high flow of O 2 does not change their crystal structure or optical properties. In contrast the nitridation of SnO 2 NWs using NH 3 leads to their elimination above 500 °C. Lower temperatures did not favor the nitridation even using extended nitridation times, hydrogen, lower ramp rates or a two-step-temperature process which are effective in the case of In 2O 3 and Ga 2O 3. However the nitridation of SnO 2 NWs was promoted by HCl, supplied in-situ via the sublimation of NH 4Cl, which reacts with Sn and SnO 2 leading to the formation of the intermediate SnCl 4, which reacts in turn with NH 3 giving tin nitride at temperatures between 400 and 500 °C. We discuss the effect of the nitridation and thermal annealing on the PL spectra. © 2011 Elsevier B.V. All rights reserved. | en |
dc.language.iso | eng | en |
dc.source | Journal of Crystal Growth | en |
dc.subject | Optical properties | en |
dc.subject | Liquids | en |
dc.subject | Hydrogen | en |
dc.subject | Crystal structure | en |
dc.subject | Oxide minerals | en |
dc.subject | X ray diffraction | en |
dc.subject | Nitrides | en |
dc.subject | Chlorine | en |
dc.subject | Nanowires | en |
dc.subject | Tin | en |
dc.subject | Vapor-liquid-solid mechanism | en |
dc.subject | Vapors | en |
dc.subject | Tin nitride | en |
dc.subject | Nitridation | en |
dc.subject | PL spectra | en |
dc.subject | Photoluminescence spectrum | en |
dc.subject | Ramp rates | en |
dc.subject | Defect state | en |
dc.subject | A1. Nanostructures | en |
dc.subject | B1. Nanomaterials | en |
dc.subject | B1. Nitrides | en |
dc.subject | B1. Oxides | en |
dc.subject | High flow | en |
dc.subject | In-situ | en |
dc.subject | Postgrowth thermal annealing | en |
dc.subject | Systematic study | en |
dc.subject | Thermal-annealing | en |
dc.title | A systematic study of the nitridation of SnO 2 nanowires grown by the vapor liquid solid mechanism | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1016/j.jcrysgro.2011.11.063 | |
dc.description.volume | 340 | |
dc.description.startingpage | 28 | |
dc.description.endingpage | 33 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.description.totalnumpages | 28-33 | |
dc.gnosis.orcid | 0000-0002-6321-233X | |