dc.contributor.author | Zervos, Matthew | en |
dc.contributor.author | Tsokkou, D. | en |
dc.contributor.author | Pervolaraki, M. | en |
dc.contributor.author | Othonos, A. | en |
dc.creator | Zervos, Matthew | en |
dc.creator | Tsokkou, D. | en |
dc.creator | Pervolaraki, M. | en |
dc.creator | Othonos, A. | en |
dc.date.accessioned | 2019-05-06T12:24:55Z | |
dc.date.available | 2019-05-06T12:24:55Z | |
dc.date.issued | 2009 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/48980 | |
dc.description.abstract | Indium oxide (In 2O 3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O 2 at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH 4Cl) which is incorporated into the In under a gas flow of nitrogen (N 2). Similarly InN NCs have also been obtained using sublimation of NH 4Cl in a gas flow of NH 3. During oxidation of In under a flow of O 2 the transfer of In into the gas stream is inhibited by the formation of In 2O 3 around the In powder which breaks up only at high temperatures, i.e. T > 900 °C, thereby releasing In into the gas stream which can then react with O 2 leading to a high yield formation of isolated 500 nm In 2O 3 octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation for T G < 900 °C. The incorporation of NH 4Cl in the In leads to the sublimation of NH 4Cl into NH 3 and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N 2 where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111) where it reacts with H 2O and O 2 leading to the formation of In 2O 3 nanopyramids on Si(111). The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H 2O in the air. Upon carrying out the reaction of In with NH 4Cl at 600 °C under NH 3 as opposed to N 2, we obtain InN nanoparticles on Si(111) with an average diameter of 300 nm. | en |
dc.language.iso | eng | en |
dc.source | Nanoscale Research Letters | en |
dc.subject | Chlorine compounds | en |
dc.subject | Indium oxide | en |
dc.subject | High temperature | en |
dc.subject | Nitrides | en |
dc.subject | Gases | en |
dc.subject | Silicon | en |
dc.subject | Low temperature growth | en |
dc.subject | Si (1 1 1) | en |
dc.subject | Oxidation | en |
dc.subject | Chemical vapor deposition | en |
dc.subject | Flow of gases | en |
dc.subject | Gas flows | en |
dc.subject | Nanocrystals | en |
dc.subject | Indium | en |
dc.subject | Ammonium compounds | en |
dc.subject | High yield | en |
dc.subject | Average diameter | en |
dc.subject | Atmospheric pressure | en |
dc.subject | Ammonium chloride | en |
dc.subject | Aerodynamics | en |
dc.subject | Direct oxidation | en |
dc.subject | Gas streams | en |
dc.subject | Indium nitride | en |
dc.subject | Low temperature | en |
dc.subject | Nanopyramids | en |
dc.subject | Sublimation | en |
dc.subject | Chemical vapour deposition | fr |
dc.title | Low temperature growth of In 2O 3 and InN nanocrystals on Si(111) via chemical vapour deposition based on the sublimation of NH 4Cl in In | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1007/s11671-009-9266-1 | |
dc.description.volume | 4 | |
dc.description.startingpage | 491 | |
dc.description.endingpage | 497 | |
dc.author.faculty | Πολυτεχνική Σχολή / Faculty of Engineering | |
dc.author.department | Τμήμα Μηχανικών Μηχανολογίας και Κατασκευαστικής / Department of Mechanical and Manufacturing Engineering | |
dc.type.uhtype | Article | en |
dc.contributor.orcid | Zervos, Matthew [0000-0002-6321-233X] | |
dc.description.totalnumpages | 491-497 | |
dc.gnosis.orcid | 0000-0002-6321-233X | |