dc.contributor.author | Othonos, Andreas S. | en |
dc.contributor.author | Lioudakis, Emmanouil E. | en |
dc.contributor.author | Tsokkou, Demetra | en |
dc.contributor.author | Philipose, U. | en |
dc.contributor.author | Ruda, H. E. | en |
dc.creator | Othonos, Andreas S. | en |
dc.creator | Lioudakis, Emmanouil E. | en |
dc.creator | Tsokkou, Demetra | en |
dc.creator | Philipose, U. | en |
dc.creator | Ruda, H. E. | en |
dc.date.accessioned | 2019-12-02T15:32:11Z | |
dc.date.available | 2019-12-02T15:32:11Z | |
dc.date.issued | 2009 | |
dc.identifier.uri | http://gnosis.library.ucy.ac.cy/handle/7/58946 | |
dc.description.abstract | In recent years, ZnSe nanowires have been widely investigated for their potential applications in optoelectronics. A typical room temperature photoluminescence spectrum of ZnSe nanowires grown by vapor-liquid-solid growth under different growth conditions shows that the spectrum is dominated by two characteristic emission peaks. The first peak is attributed to the band edge emission peak at 2.68 eV whereas the second to the broad deep defect-related emission peak in the region of 1.8-2.4 eV. In this work, we present a study of ultrafast time-resolved spectroscopy of defect states of ZnSe nanowires grown under Se-rich growth conditions. We investigate in detail the carrier dynamics of these nanostructure materials using selective optical excitation femtosecond pulses from a wavelength tunable optical parametric amplifier system. The effects of intrinsic point defects inherent in the manufacturing of these materials and in particular the relaxations of the photogenerated carriers occupying these defect states are examined. Temporal dynamics on a few picoseconds time-scale provided information on effects such as state filling and secondary excitation and their contribution to the overall induced absorption. Long time-scale probing of induced absorption provided information on the defect states associated with the observed photoluminescence in this material. © 2008 Elsevier B.V. All rights reserved. | en |
dc.source | Journal of Alloys and Compounds | en |
dc.source.uri | https://www.scopus.com/inward/record.uri?eid=2-s2.0-69249242916&doi=10.1016%2fj.jallcom.2008.07.197&partnerID=40&md5=d15d55d999079cb5cf7ee7dee287c073 | |
dc.subject | Light transmission | en |
dc.subject | Defects | en |
dc.subject | Absorption | en |
dc.subject | Nanowires | en |
dc.subject | Time-scales | en |
dc.subject | Photoluminescence | en |
dc.subject | Electromagnetic pulse | en |
dc.subject | Carrier dynamics | en |
dc.subject | Photogenerated carriers | en |
dc.subject | State-filling | en |
dc.subject | Ultra-fast | en |
dc.subject | Electric wire | en |
dc.subject | Band-edge emissions | en |
dc.subject | Picoseconds | en |
dc.subject | Growth conditions | en |
dc.subject | Potential applications | en |
dc.subject | Emission spectroscopy | en |
dc.subject | Laser spectroscopy | en |
dc.subject | Time-resolved spectroscopy | en |
dc.subject | Defect state | en |
dc.subject | Photoexcitation | en |
dc.subject | Semiconducting zinc compounds | en |
dc.subject | Carrier | en |
dc.subject | Characteristic emission | en |
dc.subject | Deep defects | en |
dc.subject | Defect-related states | en |
dc.subject | Femtosecond pulse | en |
dc.subject | Induced absorption | en |
dc.subject | Intrinsic point defects | en |
dc.subject | Light amplifiers | en |
dc.subject | Microwave amplifiers | en |
dc.subject | Nanostructure material | en |
dc.subject | Optical excitations | en |
dc.subject | Optical parametric amplifiers | en |
dc.subject | Parametric amplifiers | en |
dc.subject | Point defects | en |
dc.subject | Room temperature photoluminescence spectra | en |
dc.subject | Temporal dynamics | en |
dc.subject | Vapor-liquid-solid growth | en |
dc.subject | Wavelength tunable | en |
dc.subject | ZnSe nanowires | en |
dc.title | Ultrafast time-resolved spectroscopy of ZnSe nanowires: Carrier dynamics of defect-related states | en |
dc.type | info:eu-repo/semantics/article | |
dc.identifier.doi | 10.1016/j.jallcom.2008.07.197 | |
dc.description.volume | 483 | |
dc.description.issue | 1-2 | |
dc.description.startingpage | 600 | |
dc.description.endingpage | 603 | |
dc.author.faculty | Σχολή Θετικών και Εφαρμοσμένων Επιστημών / Faculty of Pure and Applied Sciences | |
dc.author.department | Τμήμα Φυσικής / Department of Physics | |
dc.type.uhtype | Article | en |
dc.description.notes | <p>Cited By :17</p> | en |
dc.source.abbreviation | J Alloys Compd | en |
dc.contributor.orcid | Othonos, Andreas S. [0000-0003-0016-9116] | |
dc.gnosis.orcid | 0000-0003-0016-9116 | |