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Internal field effects on the lasing characteristics of InGaN/GaN quantum well lasers
(2008)
A theoretical investigation of Inx Ga1-x N/GaN single quantum well lasers with x in the range 0.05≤x≤0.3 is carried out via self-consistent Schrödinger-Poisson calculations in the effective mass approximation in order to ...
Ultraviolet emission from low resistance Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 nanowires
(2014)
SnO2 and Sn:In2O3 nanowires were grown on Si(001), and p-n junctions were fabricated in contact with p-type Cu2S which exhibited rectifying current-voltage characteristics. Core-shell Cu2SnS3/SnO2 and CuInS2/Sn:In2O3 ...
Optical and electrical properties of selectively delta-doped strained InxGa1-xAs/GaAs quantum wells
(1996)
We report here an investigation of selectively delta-doped strained InGaAs/GaAs quantum wells. Electronic structures of the systems were calculated by self-consistently solving the Schrödinger and Poisson equations and the ...
Thermal oxidation and facet-formation mechanisms of Si nanowires
(2014)
Silicon nanowires were grown along the [111] direction on Si(001) by the vapor-liquid-solid mechanism using 1 nm Au as a catalyst. They were subsequently oxidized at 900 °C for 60 min, 120 min and 180 min, which lead to ...
Hybrid metal nanoparticle-semiconductor nanowire assemblies: Synthesis, properties and applications
(Nova Science Publishers, Inc., 2013)
Hybrid, semiconductor nanowire - metal nanoparticle assemblies have been investigated extensively in the context of nanotechnology for the development of novel sensors, solar cells, memory, energy storage and catalysis ...
Carrier dynamics in Β-Ga2O3 nanowires
(2010)
Carrier dynamics have been investigated in Β-Ga2O 3 nanowires (NWs) grown by the vapor-liquid-solid mechanism, using ultrashort transient absorption spectroscopy in conjunction with time-correlating single photon counting ...
Femtosecond carrier dynamics in In 2O 3 nanocrystals
(2009)
We have studied carrier dynamics in In 2O 3 nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics ...
Carrier dynamics in InS nanowires grown via chemical vapor deposition
(2010)
Transient femtosecond absorption spectroscopy and timecorrelating single photon counting (TCSPC) photoluminescence (PL) were employed to study InS nanowires (NWs) grown by chemical vapor deposition (CVD) and determine the ...
Tin oxide nanowires: The influence of trap states on ultrafast carrier relaxation
(2009)
We have studied the optical properties and carrier dynamics in SnO 2 nanowires (NWs) with an average radius of 50 nm that were grown via the vapor-liquid solid method. Transient differential absorption measurements have ...
Carrier relaxation dynamics in SnxNy nanowires grown by chemical vapor deposition
(2009)
Carrier relaxation dynamics in tin nitride (SnxNy) nanowires have been investigated using femtosecond transient absorption spectroscopy. The nanowires were grown directly on quartz using chemical vapor deposition and had ...