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Ab-initio electronic structure calculations and properties of [SixSn1 − x]3N4 ternary nitrides
(2016)
We carry out ab initio electronic structure calculations of (SixSn1 − x)3N4 using density functional theory with projector augmented-wave potentials under the generalized gradient approximation. We find that the energetically ...
Experimental observation of the de haas–van alphen effect in a multiband quantum-well sample
(1999)
We report measurements of magnetic quantum oscillations (the de Haas–van Alphen effect) in a quantum well containing more than one subband. The Fourier transform of the magnetization oscillations shows the expected frequencies ...
Residual Doping Effects on the Amplitude of Polarization-Induced Electric fields in GaN/AlGaN Quantum Wells
(2001)
We show that residual doping and carrier distribution effects decrease the observed polarization-induced electric fields in GaN/AlGaN quantum wells and that these effects ought to be considered if we want to compare in a ...
Carrier dynamics and conductivity of SnO 2 nanowires investigated by time-resolved terahertz spectroscopy
(2012)
THz spectroscopy has been applied to investigate the photo-induced and intrinsic conductivity in SnO 2 nanowires using the Drude-Smith model. The refractive index of the nanowires was found to decrease from 2.4 to 2.1 with ...
Ultrafast time-resolved spectroscopy of In2 O3 nanowires
(2009)
Ultrafast carrier dynamics in In2 O3 nanowires with an average diameter of ≈100±20 nm grown by the vapor-liquid-solid method have been investigated in detail using differential absorption spectroscopy with femtosecond ...
InAs quantum dots grown by molecular beam epitaxy on GaAs (211)B polar substrates
(2006)
InAs nanostructures were grown by molecular beam epitaxy on GaAs (211)B at temperatures between 400-530 °C and growth rates that were varied between 0.1 to 0.02 mono-layers (ML) per second. For temperatures up to 500 °C ...
Electronic structure of piezoelectric double-barrier InAs/InP/InAs/InP/InAs (111) nanowires
(2004)
The numerical self-consistent solution of the Poisson-Schrodinger equations in cylindrical coordinates for calculating electronic states in the effective mass approximation was implemented. High accuracy and rapid convergence ...
Sn doped β-Ga2O3 and β-Ga2S3 nanowires with red emission for solar energy spectral shifting
(2015)
Sn doped β-Ga2O3 nanowires have been grown on Si(001) via the vapor-liquid-solid mechanism at 800 °C over a broad range of compositions. These have a monoclinic β-Ga2O3 crystal structure and minimum resistances for 1-2 at. ...
Sulfur doping of M/In2O3 (M=Al,W) nanowires with room temperature near infra red emission
(2015)
We have investigated the growth of Al doped In2O3 nanowires via the vapor-liquid-solid mechanism at 800°C using Au as a catalyst. We find that the Al is not incorporated into the cubic bixbyite crystal structure of In2O3 ...
Influence of polarization field on the lasing properties of III-nitride quantum wells
(2006)
A theoretical investigation of the effect of polarization-induced fields on the optoelectronic properties of a 3 nm In0.2Ga0.8N/GaN single quantum well has been carried out via a self-consistent solution of Schrödinger-Poisson ...